Collector-Emitter Breakdown Voltage-
V(BR)CEO= -160V(Min)-2SA1386 = -180V(Min)-2SA1386A
Good Linearity of hFE
Complement to Type 2SC3519/A
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for audio and general purpose
Full PDF Text Transcription for 2SA1386 (Reference)
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2SA1386. For precise diagrams, and layout, please refer to the original PDF.
isc Silicon PNP Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min)-2SA1386 = -180V(Min)-2SA1386A ·Good Linearity of hFE ·Complement ...
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Min)-2SA1386 = -180V(Min)-2SA1386A ·Good Linearity of hFE ·Complement to Type 2SC3519/A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT 2SA1386 -160 VCBO Collector-Base Voltage V 2SA1386A -180 2SA1386 -160 VCEO Collector-Emitter Voltage V 2SA1386A -180 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -4 A 130 W 150 ℃ Tstg Storage Temperature Range -55~15
2SA1386 Datasheet
