Collector-Emitter Breakdown Voltage-
V(BR)CEO= -80V(Min)
Good Linearity of hFE
Complement to Type 2SC4385
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RAT
Full PDF Text Transcription for 2SA1670 (Reference)
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isc Silicon PNP Power Transistor 2SA1670 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Complement to Type 2SC4385 ·Minimum...
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-80V(Min) ·Good Linearity of hFE ·Complement to Type 2SC4385 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.
2SA1670 Datasheet
