2SA1670 Description
Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-50mA; IB=0 IC=-2 A;IB=-0.2 A VCB=-80V; VCE=-12V 50 MIN -80 2SA1670 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT TYP.