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2SA1670 Datasheet Power Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistor 2SA1670.

General Description

·Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Complement to Type 2SC4385 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website: www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;

IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A;

IB= -0.2A ICBO Collector Cutoff Current VCB= -80V;

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