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2SA1726 - POWER TRANSISTOR

General Description

Low Collector Saturation Voltage :VCE(sat)= -0.5(V)(Max)@IC= -2A High Switching Speed Complement to Type 2SC4512 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for audio and general purpose applications.

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Full PDF Text Transcription for 2SA1726 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SA1726. For precise diagrams, and layout, please refer to the original PDF.

isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -0.5(V)(Max)@IC= -2A ·High Switching Speed ·Complement to Type 2SC4512 ·Minimum ...

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x)@IC= -2A ·High Switching Speed ·Complement to Type 2SC4512 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A IB Base Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1726 isc website： www.iscsemi.

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