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2SA1869 - Power Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) Good Linearity of hFE Complement to Type 2SC4935 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for power amplifier applications.

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Full PDF Text Transcription for 2SA1869 (Reference)

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isc Silicon PNP Power Transistor 2SA1869 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·Good Linearity of hFE ·Complement to Type 2SC4935 ·Minim...

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O= -50V(Min) ·Good Linearity of hFE ·Complement to Type 2SC4935 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -0.3 A 10 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website： www.iscsemi.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Toshiba Semiconductor Logo 2SA1869 Silicon PNP Transistor Toshiba Semiconductor
SavantIC Logo 2SA1869 SILICON POWER TRANSISTOR SavantIC

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