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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1869
Power Amplifier Applications
2SA1869
Unit: mm
• Good linearity of hFE • Complementary to 2SC4935
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C)
VCBO VCEO VEBO
IC IB
PC
−50 −50 −5 −3 −0.3
10
V V V A A
W
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEDEC JEITA
― SC-67
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.
2SA1869 Datasheet
