Datasheet Details
| Part number | 2SA1869 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.97 KB |
| Description | Power Transistor |
| Datasheet | 2SA1869_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1869.
| Part number | 2SA1869 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.97 KB |
| Description | Power Transistor |
| Datasheet | 2SA1869_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·Good Linearity of hFE ·plement to Type 2SC4935 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -0.3 A 10 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website： .iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1869 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SA1869 | Silicon PNP Transistor | Toshiba Semiconductor |
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2SA1869 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SA1860 | POWER TRANSISTOR |
| 2SA1803 | Power Transistor |
| 2SA1804 | Power Transistor |
| 2SA1805 | Power Transistor |
| 2SA1837 | POWER TRANSISTOR |
| 2SA1859 | Power Transistor |
| 2SA1859A | Power Transistor |
| 2SA1878 | Power Transistor |
| 2SA1879 | Power Transistor |
| 2SA1880 | Power Transistor |