Download 2SA1869 Datasheet PDF
Inchange Semiconductor
2SA1869
DESCRIPTION - Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) - Good Linearity of h FE - plement to Type 2SC4935 - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 VCEO Collector-Emitter Voltage -50 VEBO Emitter-Base Voltage -5 Collector Current-Continuous -3 Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature -0.3 ℃ Tstg Storage Temperature -55~150 ℃ isc website:...