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2SA1860 Datasheet Power Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistor 2SA1860.

General Description

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·plement to Type 2SC4886 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -14 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -3 A 80 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website: .iscsemi.

1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ;

2SA1860 Distributor