Low Collector Saturation Voltage-
: VCE(sat)= -2.0V(Min) @IC= -5A
Good Linearity of hFE
Complement to Type 2SC5196
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Power amplifier applications
Recommend for 40W high fideli
Full PDF Text Transcription for 2SA1939 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
2SA1939. For precise diagrams, and layout, please refer to the original PDF.
isc Silicon PNP Power Transistor 2SA1939 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Min) @IC= -5A ·Good Linearity of hFE ·Complement to Type 2SC5196...
View more extracted text
-2.0V(Min) @IC= -5A ·Good Linearity of hFE ·Complement to Type 2SC5196 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.6 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150
2SA1939 Datasheet
