2SA1939
2SA1939 is Silicon PNP Transistor manufactured by Toshiba.
TOSHIBA Transistor Silicon PNP Triple Diffused Type
Power Amplifier Applications
Unit: mm
- plementary to 2SC5196
- Remend for 40-W high-fidelity audio frequency amplifier output stage.
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C)
VCBO VCEO VEBO
IC IB
- 80
- 80
- 5
- 6
- 0.6
V V V A A
Junction temperature Storage temperature range
Tj 150 °C
Tstg
- 55 to 150
°C
JEDEC JEITA
― ―
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-16C1A temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
Weight: 4.7 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1 2006-11-09
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test...
