Datasheet Details
| Part number | 2SA1939 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 221.49 KB |
| Description | Power Transistor |
| Datasheet | 2SA1939_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1939.
| Part number | 2SA1939 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 221.49 KB |
| Description | Power Transistor |
| Datasheet | 2SA1939_InchangeSemiconductor.pdf |
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·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Min) @IC= -5A ·Good Linearity of hFE ·Complement to Type 2SC5196 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.6 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1939 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ;
IB= 0 -80 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA1939 | Silicon PNP Transistor | Toshiba Semiconductor |
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2SA1939 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
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| 2SA1942 | Power Transistor |
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| 2SA1962 | POWER TRANSISTOR |
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