High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -160V(Min)
Complement to Type 2SC5199
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Power amplifier applications
Recommend for 80W high fidelity audio frequency amplifier
Full PDF Text Transcription for 2SA1942 (Reference)
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2SA1942. For precise diagrams, and layout, please refer to the original PDF.
isc Silicon PNP Power Transistor 2SA1942 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·Complement to Type 2SC5199 ·Minimum Lot-to-Lot var...
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BR)CEO= -160V(Min) ·Complement to Type 2SC5199 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1.2 A 120 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.
2SA1942 Datasheet
