2SA1942
2SA1942 is Silicon PNP Transistor manufactured by Toshiba.
TOSHIBA Transistor Silicon PNP Triple Diffused Type
Power Amplifier Applications
Unit: mm
- High breakdown voltage: VCEO =
- 160 V (min)
- plementary to 2SC5199
- Remended for 80-W high-fidelity audio frequency amplifier output stage
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V CBO
- 160
Collector-emitter voltage
V CEO
- 160
Emitter-base voltage
VEBO
- 5 V
Collector current
- 12 A
Base current
- 1.2 A
Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range
PC 120 W
Tj 150 °C
T stg
- 55 to...