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TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1942
Power Amplifier Applications
2SA1942
Unit: mm
• High breakdown voltage: VCEO = −160 V (min) • Complementary to 2SC5199
• Recommended for 80-W high-fidelity audio frequency amplifier output stage
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V CBO
−160
V
Collector-emitter voltage
V CEO
−160
V
Emitter-base voltage
VEBO −5 V
Collector current
IC −12 A
Base current
IB −1.2 A
Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range
PC 120 W
Tj 150 °C
T stg
−55 to 150
°C
JEDEC JEITA TOSHIBA
― ― 2-21F1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 9.75 g (typ.
2SA1942 Datasheet
