Datasheet Details
| Part number | 2SA1942 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 219.53 KB |
| Description | Power Transistor |
| Datasheet | 2SA1942_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1942.
| Part number | 2SA1942 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 219.53 KB |
| Description | Power Transistor |
| Datasheet | 2SA1942_InchangeSemiconductor.pdf |
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·Complement to Type 2SC5199 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1.2 A 120 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1942 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -8.0A;
IB= -0.8A VBE(on) Base-Emitter On Voltage IC= -6A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA1942 | Silicon PNP Transistor | Toshiba Semiconductor |
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2SA1942 | SILICON POWER TRANSISTOR | SavantIC |
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