Datasheet Details
| Part number | 2SA649 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.76 KB |
| Description | PNP Transistor |
| Datasheet |
 2SA649 Datasheet
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| Part number | 2SA649 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.76 KB |
| Description | PNP Transistor |
| Datasheet |
2SA649 Datasheet
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -11 A 80 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA;
isc Silicon PNP Power Transistor 2SA649.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA649 | Silicon POwer Transistors | SavantIC |
| Part Number | Description |
|---|---|
| 2SA648 | PNP Transistor |
| 2SA626 | PNP Transistor |
| 2SA627 | PNP Transistor |
| 2SA633 | POWER TRANSISTOR |
| 2SA634 | POWER TRANSISTOR |
| 2SA636 | POWER TRANSISTOR |
| 2SA636A | POWER TRANSISTOR |
| 2SA650 | PNP Transistor |
| 2SA651 | Silicon PNP Transistor |
| 2SA652 | Silicon PNP Power Transistor |