| Part number | 2SA651 |
|---|---|
| Datasheet | 2SA651-InchangeSemiconductor.pdf |
| File Size | 189.06 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon PNP Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio power amplifier applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous...
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SA650 | PNP Transistor |
| 2SA652 | Silicon PNP Power Transistor |
| 2SA653 | POWER TRANSISTOR |
| 2SA656 | POWER TRANSISTOR |
| 2SA657 | POWER TRANSISTOR |
| 2SA658 | Power Transistor |
| 2SA626 | PNP Transistor |
| 2SA627 | PNP Transistor |
| 2SA633 | POWER TRANSISTOR |
| 2SA634 | POWER TRANSISTOR |
