Datasheet Details
| Part number | 2SA653 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.84 KB |
| Description | POWER TRANSISTOR |
| Download | 2SA653 Download (PDF) |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA653 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.84 KB |
| Description | POWER TRANSISTOR |
| Download | 2SA653 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·Contunuous Collector Current IC= -1A ·Power Dissipation PC= 15W @TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier color TV vertical deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -1.0 A PC Collector Power Dissipation@TC=25℃ 15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SA653 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA653 | Silicon POwer Transistors | SavantIC |
| Part Number | Description |
|---|---|
| 2SA650 | PNP Transistor |
| 2SA651 | Silicon PNP Transistor |
| 2SA652 | Silicon PNP Power Transistor |
| 2SA656 | POWER TRANSISTOR |
| 2SA657 | POWER TRANSISTOR |
| 2SA658 | Power Transistor |
| 2SA626 | PNP Transistor |
| 2SA627 | PNP Transistor |
| 2SA633 | POWER TRANSISTOR |
| 2SA634 | POWER TRANSISTOR |