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Inchange Semiconductor

2SA653 Datasheet Preview

2SA653 Datasheet

POWER TRANSISTOR

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isc Silicon PNP Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min.)
·Contunuous Collector Current IC= -1A
·Power Dissipation PC= 15W @TC= 25
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for low frequency power amplifier color TV vertical
deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-150
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-1.0
A
PC
Collector Power Dissipation@TC=25
15
W
TJ
Junction Temperature
150
Tstg
Storage Temperature
-55~150
2SA653
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




Inchange Semiconductor

2SA653 Datasheet Preview

2SA653 Datasheet

POWER TRANSISTOR

No Preview Available !

isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= -1mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -0.5A; IB= -50mA
ICBO
Collector Cutoff Current
VCB= -150V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC Current Gain
IC= -0.2A; VCE= -5V
fT
Current-Gain—Bandwidth Product
IC= -0.1A; VCE= -10V
2SA653
MIN TYP. MAX UNIT
-120
V
-150
V
-1.5
V
-2.0
V
-10 μA
-10 μA
40
200
15
MHz
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 2SA653
Description POWER TRANSISTOR
Maker Inchange Semiconductor
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2SA653 Datasheet PDF






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