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2SA656 Datasheet Preview

2SA656 Datasheet

POWER TRANSISTOR

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isc Silicon PNP Power Transistor
2SA656
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -110V(Min.)
·Complement to Type 2SC519
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power amplifier applications.
·Power switching applications.
·DC-DC converter applications.
·Regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-130
V
VCEO Collector-Emitter Voltage
-110
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-7
A
IB
Base Current
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
-2
A
50
W
150
Tstg
Storage Temperature
-65~150
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Inchange Semiconductor

2SA656 Datasheet Preview

2SA656 Datasheet

POWER TRANSISTOR

No Preview Available !

isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -1A
VBE(sat) Base-Emitter Saturation Voltage
IC= -5A; IB= -1A
ICBO
Collector Cutoff Current
VCB= -130V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -1A; VCE= -5V
hFE-2
DC Current Gain
IC= -5A; VCE= -5V
COB
Collector Output Capacitance
IE= 0; VCB= -10V; f= 1MHz
fT
Current-Gain—Bandwidth Product
IC= -1A; VCE= -10V
2SA656
MIN TYP. MAX UNIT
-110
V
-2.0 V
-2.5 V
-0.1 mA
-5 mA
30
300
15
150
pF
5
MHz
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 2SA656
Description POWER TRANSISTOR
Maker Inchange Semiconductor
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2SA656 Datasheet PDF






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