isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -1A
VBE(sat) Base-Emitter Saturation Voltage
IC= -5A; IB= -1A
ICBO
Collector Cutoff Current
VCB= -130V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -1A; VCE= -5V
hFE-2
DC Current Gain
IC= -5A; VCE= -5V
COB
Collector Output Capacitance
IE= 0; VCB= -10V; f= 1MHz
fT
Current-Gain—Bandwidth Product
IC= -1A; VCE= -10V
2SA656
MIN TYP. MAX UNIT
-110
V
-2.0 V
-2.5 V
-0.1 mA
-5 mA
30
300
15
150
pF
5
MHz
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ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
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