Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min)
Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max.)@ IC= 4A
Complement to Type 2SC1445
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for general purpos
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isc Silicon PNP Power Transistor
2SA765
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min) ·Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max.)@ IC= 4A ·Complement to Type 2SC1445 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-80
V
VCEO Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-6
A
40
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.
2SA765 Datasheet
