Datasheet Details
| Part number | 2SA770 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.22 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA770_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA770.
| Part number | 2SA770 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.22 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA770_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- :V(BR)CEO= -60(V)(Min.) ·plement to Type 2SC1985 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A IB Base Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA770 | (2SA770 / 2SA771) Silicon POwer Transistors | SavantIC |
| Part Number | Description |
|---|---|
| 2SA771 | POWER TRANSISTOR |
| 2SA775 | POWER TRANSISTOR |
| 2SA714 | POWER TRANSISTOR |
| 2SA738 | POWER TRANSISTOR |
| 2SA747 | POWER TRANSISTOR |
| 2SA747A | POWER TRANSISTOR |
| 2SA748 | POWER TRANSISTOR |
| 2SA753 | POWER TRANSISTOR |
| 2SA755 | POWER TRANSISTOR |
| 2SA756 | POWER TRANSISTOR |