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2SA770 Datasheet Preview

2SA770 Datasheet

POWER TRANSISTOR

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isc Silicon PNP Power Transistor
2SA770
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
:V(BR)CEO= -60(V)(Min.)
·Complement to Type 2SC1985
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-60
V
VCEO Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-6
A
IB
Base Collector Current-Continuous
PC
Total Power Dissipation
@ TC=25
TJ
Junction Temperature
-3
A
40
W
150
Tstg
Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




Inchange Semiconductor

2SA770 Datasheet Preview

2SA770 Datasheet

POWER TRANSISTOR

No Preview Available !

isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A
ICBO
Collector Cutoff Current
VCB= -60V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -6V; IC= 0
hFE
DC Current Gain
IC= -1A; VCE= -4V
fT
Current-Gain—Bandwidth Product
IE= 0.5A; VCE= -12V
Switching Times
tr
Rise Time
tstg
Storage Time
tf
Fall Time
IC= -3A ,RL= 3Ω,
IB1= -IB2= -0.4A,VCC= -9V
2SA770
MIN TYP. MAX UNIT
-60
V
-1.0
V
-1.0 mA
-1.0 mA
40
10
MHz
0.9
μs
1.0
μs
0.1
μs
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 2SA770
Description POWER TRANSISTOR
Maker Inchange Semiconductor
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