Datasheet Details
| Part number | 2SA775 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.40 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA775_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA775.
| Part number | 2SA775 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.40 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA775_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage : V(BR)CEO= -100V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose output amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -0.7 A 12.5 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=-10mA ,IB=0 V(BR)CBO Collector-Base Breakdown Voltage IC=-10μA ,IE=0 V(BR)EBO Emitter-Base Breakdown Voltage IE=-10μA ,IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA775 | Silicon POwer Transistors | SavantIC |
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|---|---|
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