2SA775
DESCRIPTION
- Collector-Emitter Breakdown Voltage
: V(BR)CEO= -100V(Min)
- Good Linearity of h FE
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for general-purpose output amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-100
VCEO Collector-Emitter Voltage
-100
VEBO
Emitter-Base Voltage
-4
Collector Current-Continuous
Total Power Dissipation @ TC=25℃
Junction Temperature
-0.7
℃
Tstg
Storage Temperature Range
-55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC=-10m A...
