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2SA770 - POWER TRANSISTOR

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Description

Collector-Emitter Breakdown Voltage- :V(BR)CEO= -60(V)(Min.) Complement to Type 2SC1985 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for audio and general purpose applications.

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Datasheet Details

Part number 2SA770
Manufacturer Inchange Semiconductor
File Size 216.22 KB
Description POWER TRANSISTOR
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isc Silicon PNP Power Transistor 2SA770 DESCRIPTION ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= -60(V)(Min.) ·Complement to Type 2SC1985 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A IB Base Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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