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2SA775 - POWER TRANSISTOR

General Description

Collector-Emitter Breakdown Voltage : V(BR)CEO= -100V(Min) Good Linearity of hFE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for general-purpose output amplifier applications.

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isc Silicon PNP Power Transistor 2SA775 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -100V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose output amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -0.7 A 12.5 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.