2SA807
2SA807 is POWER TRANSISTOR manufactured by Inchange Semiconductor.
DESCRIPTION
- High Power Dissipation-
: PC= 50W(Max.)@TC=25℃
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min.)
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
VCEO Collector-Emitter Voltage
-60
VEBO
Emitter-Base Voltage
-6
Collector Current-Continuous
-6
Base Current-Continuous
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
-3
℃
Tstg
Storage Temperature
-65~150...
