2SA807 Description
Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-50mA IB=0 IC=-3A; VCE=-12V 20 10 MIN -60 2SA807 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT TYP. MAX UNIT V -1.5 -1.0 -1.0 V mA mA MHz...