Datasheet4U Logo Datasheet4U.com

2SAR572D Datasheet Silicon PNP Power Transistor

Manufacturer: Inchange Semiconductor

General Description

·Suitable for middle power drivers ·Low VCE(sat) VCE(sat)≤-0.4V@(IC=-2A,IB=-0.1A) ·Complementary NPN types:2SCR572D ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low frequency amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -10 A 10 W 150 ℃ -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SAR572D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

MAX UNIT BVCBO Collector-Base breakdown voltage IC=-100uA -30 V BVCEO Collector-Emitter breakdown voltage IC=-1mA -30 V BVEBO Emitter-Base breakdown voltage IE=-100uA -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A;

IB= -100mA ICBO Collector Cutoff Current VCB= -30V;

Overview

isc Silicon PNP Power Transistor 2SAR572D.