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2SB1531 - Silicon PNP Power Transistor

Description

High DC Current Gain- : hFE= 5000(Min)@IC= -5A Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -5A Complement to Type 2SD2340 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applicati

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Datasheet Details

Part number 2SB1531
Manufacturer Inchange Semiconductor
File Size 222.97 KB
Description Silicon PNP Power Transistor
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isc Silicon PNP Darlington Power Transistor 2SB1531 DESCRIPTION ·High DC Current Gain- : hFE= 5000(Min)@IC= -5A ·Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -5A ·Complement to Type 2SD2340 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -130 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -6 A 50 W 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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