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Inchange Semiconductor

2SB705A Datasheet Preview

2SB705A Datasheet

Power Transistor

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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB705
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min)
·Complement to Type 2SD745
·High Power Dissipation
APPLICATIONS
·For audio frequency power amplifier applications
·Suitable for output stages of 60~120 watts audio amplifier
and voltage regulations.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
i.cnSYMBOL
PARAMETER
VALUE
UNIT
.iscsemVCBO
Collector-Base Voltage
-140
V
wwwVCEO
Collector-Emitter Voltage
-140
V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous -10 A
ICM Collector Current-Peak
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
-15 A
120 W
150
Tstg Storage Temperature Range
-55~150
wiswc wW.eDbastaitSeheewt4wUw.c.iosmcsemi.cn




Inchange Semiconductor

2SB705A Datasheet Preview

2SB705A Datasheet

Power Transistor

No Preview Available !

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB705
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB=B -0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= -5A; IB=B -0.5A
ICBO Collector Cutoff Current
VCB= -140V; IE= 0
IEBO Emitter Cutoff Current
VEB= -3V; IC= 0
-1.5 V
-2.0 V
-50 μA
-50 μA
hFE-1
DC Current Gain
IC= -50mA; VCE= -5V
20
hFE-2
DC Current Gain
IC= -2A; VCE= -5V
i.cnCOB Output Capacitance
IE= 0; VCB= -10V; ftest= 1.0MHz
.iscsemfT Current-Gain—Bandwidth Product IC= -0.2A; VCE= -5V
www‹ hFE-2 Classifications
40 200
430 pF
17 MHz
SRQ
40-80 60-120 100-200
isc Websitewww.iscsemi.cn
2


Part Number 2SB705A
Description Power Transistor
Maker Inchange Semiconductor
PDF Download

2SB705A Datasheet PDF






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