2SB705A Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB705 .
Collector-Emitter Breakdown Voltage: V(BR)CEO= -140V(Min). Complement to Type 2SD745. High Power Dissipation APPLICATIONS. For audio.

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Datasheet Specifications

Part number: 2SB705A
Manufacturer: Inchange Semiconductor
File Size: 245.00 KB
Datasheet: 2SB705A_ISC.pdf
Description: Power Transistor

Applications

* For audio frequency power amplifier applications
* Suitable for output stages of 60~120 watts audio amplifier and voltage regulations. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w s c s i .

2SB705A Distributors

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2SB705A Power Transistor Inchange Semiconductor

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