2SB705A
2SB705A is Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage: V(BR)CEO= -140V(Min)
- plement to Type 2SD745
- High Power Dissipation
APPLICATIONS
- For audio frequency power amplifier applications
- Suitable for output stages of 60~120 watts audio amplifier and voltage regulations.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage w w s c s i . w
VALUE UNIT -140 V -140 V -5 V -10 A -15 A 120 W n c . i m e
Collector Current-Continuous
Collector Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150
℃
.. isc Website：.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
2SB705
UNIT
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -5A; IB=...
