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2SB705A Datasheet Power Transistor

Manufacturer: Inchange Semiconductor

General Description

·Collector-Emitter Breakdown Voltage: V(BR)CEO= -140V(Min) ·Complement to Type 2SD745 ·High Power Dissipation APPLICATIONS ·For audio frequency power amplifier applications ·Suitable for output stages of 60~120 watts audio amplifier and voltage regulations.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w s c s i .

w VALUE UNIT -140 V -140 V -5 V -10 A -15 A 120 W n c .

Overview

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor.