Datasheet Details
| Part number | 2SB768 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.84 KB |
| Description | Silicon PNP Transistor |
| Download | 2SB768 Download (PDF) |
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| Part number | 2SB768 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.84 KB |
| Description | Silicon PNP Transistor |
| Download | 2SB768 Download (PDF) |
|
|
|
·High voltage:VCEO=-150V ·PNP silicon triple diffused transistor ·Complementary NPN types:2SD1033 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The 2SB768 is designed for color TV vertical deflection output especially in hybrid integrated circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -3 A 2 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB768 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCE(sat)NOTE Collector-Emitter Saturation Voltage IC= -0.5A;
IB= -50mA ICBO Collector Cutoff Current VCB= -150V;
isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB768.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB768 | PNP Transistor | NEC |
 |
2SB768 | Silicon PNP Transistor | Kexin |
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