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2SB768 - Silicon PNP Transistor

Key Features

  • High Voltage:VCBO=-150V +1.50 0.15 -0.15 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm 3.80 +5.55 0.15 -0.15 +9.70 0.2 -0.2 + 0.252 .6 5 -0.1 + 0.150 .5 0 -0.15 + 0.281 .5 0 -0.1 0.80+0.1 -0.1 0.127 max 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Collector-to-Base Voltage VCBO Collector-to-Emitter Voltage VCEO Emitter-to-Base Voltage VEBO Collector Current IC Collector Current (Pulse).
  • 1 ICP Total.

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SMD Type Silicon PNP Transistor 2SB768 Transistors Features High Voltage:VCBO=-150V +1.50 0.15 -0.15 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm 3.80 +5.55 0.15 -0.15 +9.70 0.2 -0.2 + 0.252 .6 5 -0.1 + 0.150 .5 0 -0.15 + 0.281 .5 0 -0.1 0.80+0.1 -0.1 0.127 max 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Collector-to-Base Voltage VCBO Collector-to-Emitter Voltage VCEO Emitter-to-Base Voltage VEBO Collector Current IC Collector Current (Pulse) *1 ICP Total Power Dissipation *2 Ta=25 PT Junction Temperature Tj Storage Temperature Tstg *1 PW 10ms,.Duty Cycle 50% *2 when mounted on ceramic substrate of 7.5cm2 X 0.