2SB767
2SB767 is Silicon PNP Transistor manufactured by Panasonic.
Features q q q
4.5±0.1 1.6±0.2
1.5±0.1
Large collector power dissipation PC. High collector to emitter voltage VCEO. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C)
Ratings
- 80
- 80
- 5
- 1
- 0.5
- 2.6±0.1
0.4max.
45°
1.0- 0.2
+0.1
0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15
4.0- 0.20
0.4±0.04 s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
- Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Unit V V V A A W ˚C ˚C
1:Base 2:Collector 3:Emitter
1 marking
EIAJ:SC- 62 Mini Power Type Package
1 150
- 55 ~ +150 1cm2
Marking symbol : C
Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25˚C)
Symbol ICBO VCBO VCEO VEBO h FE1 h FE2 VCE(sat) VBE(sat) f T Cob
- 1
Conditions VCB =
- 20V, IE = 0 IC =
- 10µA, IE = 0 IC =
- 100µA, IB = 0 IE =
- 10µA, IC = 0 VCE =
- 10V, IC...
