2SB834 - Silicon PNP Power Transistors

Product Overview

Inchange Semiconductor

Datasheet Details

Part number	2SB834
Manufacturer	Inchange Semiconductor
File Size	218.17 KB
Description	Silicon PNP Power Transistors
Datasheet	2SB834 Datasheet
Additional preview pages of the 2SB834 datasheet.

Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max) @IC= -3.0A Complementary to 2SD880 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Em

📁 Similar Datasheet

2SB834I - Silicon PNP transistor (BLUE ROCKET ELECTRONICS)
2SB831 - Silicon PNP Epitaxial Transistor (Hitachi Semiconductor)
2SB833 - SILICON PNP TRANSISTOR (Toshiba)
2SB800 - PNP SILICON EPITAXIAL TRANSISTOR (NEC)
2SB804 - PNP SILICON EPITAXIAL TRANSISTOR (NEC)
2SB805 - PNP SILICON EPITAXIAL TRANSISTOR (NEC)
2SB806 - PNP SILICON EPITAXIAL TRANSISTOR (NEC)
2SB808 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)

Other Datasheets by Inchange Semiconductor

2SB817 - Silicon PNP Power Transistor
2SB821 - Silicon PNP Power Transistors
2SB855 - Silicon PNP Power Transistor
2SB856 - Silicon PNP Power Transistor
2SB857 - Silicon PNP Power Transistor
2SB859 - Silicon PNP Power Transistor

Published: Nov 28, 2011 |