2SB834 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Low Collector-Emitter Saturation Voltage- : MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;.
2SB834 is Silicon PNP Power Transistors manufactured by Inchange Semiconductor .
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Low Collector-Emitter Saturation Voltage- : MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;.