| Part Number | 2SB834 Datasheet |
|---|---|
| Manufacturer | Weitron Technology |
| Overview | 2SB834 PNP Silicon Epitaxial Power Transistor P b Lead(Pb)-Free Features: * DC Current Gain hFE = 60-200 @IC = 0.5A * Low VCE(sat) ≤ 1.0V(MAX) @IC = 3.0A, IB = 0.3A * Complememtar. * DC Current Gain hFE = 60-200 @IC = 0.5A * Low VCE(sat) ≤ 1.0V(MAX) @IC = 3.0A, IB = 0.3A * Complememtary to NPN 2SD880 COLLECTOR 2 BASE 1 1 2 3 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER TO-220 Unit V V V A W W/˚C ˚C ˚C ABSOLUTE MAXIMUM RATINGS (TA=25ºC) Rating Collector to Base Voltage Collec. |
2SB834 Datasheet and Specifications PDF
The 2SB834 is a PNP Silicon Epitaxial Power Transistor.
| Part Number | 2SB834 Datasheet |
|---|---|
| Description | Transistor |
| Manufacturer | TGS |
| Overview | It is intented for use in power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector C. t . |
| Part Number | 2SB834 Datasheet |
|---|---|
| Description | Silicon PNP Power Transistors |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max) @IC= -3.0A ·Complementary to 2SD880 ·Minimum Lot-to-Lot variations for rob. CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 -60 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3.0A; IB= -0.3A -1.0 V VBE(on) Base-Emitter On Voltage IC= -0.5A; VCE= -5. |
| Part Number | 2SB834 Datasheet |
|---|---|
| Description | PNP Epitaxial Silicon Transistor |
| Manufacturer | Galaxy Microelectronics |
| Overview | PNP Epitaxial Silicon Transistor FEATURES z Low Collector-Emitter Saturation Voltage. VCE(sat)=1V(Max)@IC=3A,IB=0.3A. z DC Current Gain HFE=60-200@IC=0.5A. z Complememtary to PNP 2SD880. Pb Lead-fre. z Low Collector-Emitter Saturation Voltage. VCE(sat)=1V(Max)@IC=3A,IB=0.3A. z DC Current Gain HFE=60-200@IC=0.5A. z Complememtary to PNP 2SD880. Pb Lead-free Production specification 2SB834 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter . |