Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
Low Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.0V(Max) @IC= -3.0A
Complementary to 2SD880
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
Designed for use in
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isc Silicon PNP Power Transistor
2SB834
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.0V(Max) @IC= -3.0A ·Complementary to 2SD880 ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Designed for use in audio frequency power amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-3.0
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-0.
2SB834 Datasheet
