2SB834 datasheet by Inchange Semiconductor.
| Part number | 2SB834 |
|---|---|
| Datasheet | 2SB834_InchangeSemiconductor.pdf |
| File Size | 218.17 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon PNP Power Transistors |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Low Collector-Emitter Saturation Voltage- : MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SB834 | Silicon PNP Transistor | Toshiba |
 |
2SB834 | PNP Silicon Epitaxial Power Transistor | Weitron Technology |
 |
2SB834 | Silicon PNP Power Transistors | Savantic |
 |
2SB834 | HIGH VOLTAGE TRANSISTOR | UTC |
 |
2SB834 | Transistor | TGS |
View all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SB817 | Silicon PNP Power Transistor |
| 2SB821 | Silicon PNP Power Transistors |
| 2SB855 | Silicon PNP Power Transistor |
| 2SB856 | Silicon PNP Power Transistor |
| 2SB857 | Silicon PNP Power Transistor |
| 2SB859 | Silicon PNP Power Transistor |
| 2SB874 | Silicon PNP Power Transistor |
| 2SB881 | Silicon PNP Power Transistor |
| 2SB882 | Silicon PNP Power Transistor |
| 2SB883 | Silicon PNP Power Transistor |
