2SB834 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Low Collector-Emitter Saturation Voltage- : MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;.
| Part number | 2SB834 |
|---|---|
| Download | 2SB834 Datasheet (PDF) |
| File Size | 218.17 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon PNP Power Transistors |
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| Manufacturer | Part Number | Description |
|---|---|---|
Toshiba |
2SB834 | Silicon PNP Transistor |
Weitron Technology |
2SB834 | PNP Silicon Epitaxial Power Transistor |
Savantic |
2SB834 | Silicon PNP Power Transistors |
Unisonic Technologies |
2SB834 | HIGH VOLTAGE TRANSISTOR |
TGS |
2SB834 | Transistor |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Low Collector-Emitter Saturation Voltage- : MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;.