Datasheet Summary
isc Silicon PNP Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
- Low Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.0V(Max) @IC= -3.0A
- plementary to 2SD880
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use in audio frequency power amplifier...
