Weitron Technology 2SB834
PNP Silicon Epitaxial Power Transistor
| Part No. | 2SB834 |
|---|---|
| Datasheet | 2SB834 Download |
| Manufacturer |  Weitron Technology |
| Description | PNP Silicon Epitaxial Power Transistor |
| Buy | Stock & Price |
FEATURES
: * DC Current Gain hFE = 60-200 @IC = 0.5A * Low VCE(sat) ≤ 1.0V(MAX) @IC = 3.0A, IB = 0.3A * Complememtary to NPN 2SD880 COLLECTOR 2 BASE 1 1 2 3 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER TO-220 Unit V V V A W W/˚C ˚C ˚CABSOLUTE MAXIMUM RATINGS
(TA=25ºC) Rating Collector to Base Voltage Collector to Emitter Voltage Collector to Base Voltage Collector Current Total Device Disspation TA=25°C TC=25°C Derate above 25°C Symbol VCBO VCEO VEBO IC PD TJ Tstg Value -60 -60 -7.0 -3.0 1.5 30 0.24 +150 -55 to +150 Junction Temperature Storage TemperatureELECTRICAL CHARACTERISTICS
Characteristics Collector-Base Breakdown Voltage IC=-100µA, IE =0 Collector-Emitter Breakdown Voltage IC=-50mA, IB =0 Emitter-Base Breakdown Voltage IE=-100µA, IC =0 Collector Cut-Off Current VCB=-60V, IE=0 Emitter-Cut-Off Current VEB=-7V, IC=0 Symbol BVCBO BVCEO BVEBO ICBO IEBO Min -60 -60 Max Max Unit V V -7.0 - - -100 -100 V µA µA WEITRON 1/3 02-Feb-07 Datasheet pdf - 2SB834ELECTRICAL CHARACTERISTICS
(TA=25˚...
