2SB834 Description
.DataSheet.co.kr 2SB834 PNP Silicon Epitaxial Power Transistor P b Lead(Pb)-Free.
2SB834 Key Features
- DC Current Gain hFE = 60-200 @IC = 0.5A
- Low VCE(sat) ≤ 1.0V(MAX) @IC = 3.0A, IB = 0.3A
- plememtary to NPN 2SD880
| Part number | 2SB834 |
|---|---|
| Download | 2SB834 Datasheet (PDF) |
| File Size | 225.59 KB |
| Manufacturer | Weitron Technology |
| Description | PNP Silicon Epitaxial Power Transistor |
|
|
|
| Manufacturer | Part Number | Description |
|---|---|---|
Toshiba |
2SB834 | Silicon PNP Transistor |
| 2SB834 | Silicon PNP Power Transistors | |
Savantic |
2SB834 | Silicon PNP Power Transistors |
Unisonic Technologies |
2SB834 | HIGH VOLTAGE TRANSISTOR |
TGS |
2SB834 | Transistor |
.DataSheet.co.kr 2SB834 PNP Silicon Epitaxial Power Transistor P b Lead(Pb)-Free.