2SB834 - Silicon PNP Transistor

Toshiba

Key Features

C.3 MAX. Unit in mm 3.6±C.
Low Collector Saturation Voltage.
' Vce (sat) =-1-07 (Max. ) at Ic=-3A, Ib=-0.3A . Collector Power Dissipation : P C =30W (Tc=25°C) . Complementary to 2SD880.

2SB834 silicon pnp transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SB834
Manufacturer	Toshiba
File Size	93.49 KB
Description	Silicon PNP Transistor
Datasheet	2SB834 Datasheet

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Full PDF Text Transcription (Reference)

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: SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) 2SB834 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES C.3 MAX. Unit in mm 3.6±C • Low Collector Saturation Voltage •' Vce (sat) =-1-07 (Max.) at Ic=-3A, Ib=-0.3A . Collector Power Dissipation : P C =30W (Tc=25°C) . Complementary to 2SD880. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -7 V Collector Current ic -3 A Base Current IB -0.5 A Collector Power Dissipation Ta=25°C PC Tc=25°C 1.5 W 30 Junction Temperature Tj 150 °C Storage Temperature Range Tstg -55M.50 °c ZJbi .2.54 , i C ^ ' ' ~» -j.- <,- 3 - . ! 1 «?t 1. BASE 2. COLLECTOR CHEAT SINK; 3.