• Part: 2SB834
  • Description: Silicon PNP Transistor
  • Manufacturer: Toshiba
  • Size: 93.49 KB
Download 2SB834 Datasheet PDF
2SB834 page 2
Page 2

Datasheet Summary

: SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Features C.3 MAX. Unit in mm 3.6±C - Low Collector Saturation Voltage - ' Vce (sat) =-1-07 (Max.) at Ic=-3A, Ib=-0.3A . Collector Power Dissipation : P C =30W (Tc=25°C) . plementary to 2SD880. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -60 Collector-Emitter Voltage VCEO -60 Emitter-Base Voltage VEBO -7 Collector Current ic -3 Base Current -0.5 Collector Power Dissipation Ta=25°C PC Tc=25°C Junction...