2SB833 - SILICON PNP TRANSISTOR

Toshiba

Key Features

. High Collector Current : Ic=-30A . High DC Current Gain : h FE ( 2 )=1000(Min. ) (V CE =-5V, I C =-20A) . Monolithic Construction with Built-in Base-Emitter Shunt Resistor. Unit in mm.

2SB833 silicon pnp transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SB833
Manufacturer	Toshiba
File Size	108.36 KB
Description	SILICON PNP TRANSISTOR
Datasheet	2SB833 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SB833 SILICON PNP TRIPLE DIFFUSED TYPE (DARLINGTON POWER) HIGH CURRENT SWITCHING APPLICATIONS. FEATURES . High Collector Current : Ic=-30A . High DC Current Gain : h FE ( 2 )=1000(Min.) (V CE =-5V, I C =-20A) . Monolithic Construction with Built-in Base-Emitter Shunt Resistor. Unit in mm MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO v EBO ic lB_ ?C Ti Tstg RATING -80 -80 -5 -30 -1 UNIT 150 150 -65-150 1. BASE 2. EMITTER COLLECTOR (CASE) TO — TOSHIBA TC—3 , TB-3 2— 2 1A1 Mounting kit No. AC73 Weight : 12.