2SB833
2SB833 is SILICON PNP TRANSISTOR manufactured by Toshiba.
FEATURES
. High Collector Current : Ic=-30A . High DC Current Gain
: h FE ( 2 )=1000(Min.) (V CE =-5V, I C =-20A) . Monolithic Construction with Built-in Base-Emitter
Shunt Resistor.
Unit in mm
MAXIMUM RATINGS (Ta=25 C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature
Storage Temperature Range
SYMBOL VCBO VCEO v EBO ic l B_
?C
Ti
Tstg
RATING -80 -80 -5 -30 -1
UNIT
-65-150
1. BASE 2. EMITTER
COLLECTOR (CASE)
- TOSHIBA
TC- 3 , TB-3 2- 2 1A1
Mounting kit No. AC73 Weight : 12. 9e
EQUIVALENT CIRCUIT
BASE O o COLLECTOR
TOSHIBA CORPORATION
288-
ELECTRICAL CHARACTERISTICS (Ta= 25°C)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current Collector-Emitter Breakdown Voltage
SYMBOL ICBO IEBO v (BR) CEO
TEST CONDITION...
