Datasheet Summary
:
SILICON PNP TRIPLE DIFFUSED TYPE
- POWER AMPLIFIER APPLICATIONS.
Features
.
High
Breakdown
Voltage
:
V^g =-100V (3
. Low Collector-Emitter Satura tion Voltage
= VCE(sat) =-2.0V(Max.) . plementary to 2SD1407
. Remended for 30W High-Fid elity Audio Frequency
Amplifier Output Stage.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL v CBO v CEO Vebo ic IB
T j
T stg
RATING -100 -100 -5 -5 -0.5
-55-150
UNIT V V V A A
W °C °C
Unit in mm
10.3MAX
7.0 03.2±O.2
/. l~T"~l
13J k !...
