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:
SILICON PNP TRIPLE DIFFUSED TYPE
—
POWER AMPLIFIER APPLICATIONS.
FEATURES
.
High
Breakdown
Voltage
:
V^g =-100V (3
. Low Collector-Emitter Satura tion Voltage
= VCE(sat) =-2.0V(Max.) . Complementary to 2SD1407
. Recommended for 30W High-Fid elity Audio Frequency
Amplifier Output Stage.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL v CBO v CEO Vebo ic IB
PC
T
j
T stg
RATING -100 -100 -5 -5 -0.5
30
150
-55-150
UNIT V V V A A
W °C °C
Unit in mm
10.3MAX
7.0 03.2±O.2
/.
l~T"~l
13J k !
r
3n
:~
ci
<1
o
s
to
!
-
1 1.4
+ 125
0.76- 11 5
'
il
.!
4 1"
M S
2.54±0.25
mo
2.
2SB1016 Datasheet
