2SB1019 Description
2SB1 01 1« SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. Unit in mm POWER AMPLIFIER APPLICATIONS.
2SB1019 Key Features
- 55-150
- 2.54±0.25
2SB1019 Datasheet
| Part number | 2SB1019 |
|---|---|
| Download | 2SB1019 Datasheet (PDF) |
| File Size | 120.23 KB |
| Manufacturer | Toshiba |
| Description | SILICON PNP TRANSISTOR |
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