2SB1019 Datasheet and Specifications PDF

The 2SB1019 is a SILICON POWER TRANSISTOR.

Key Specifications

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Part Number2SB1019 Datasheet
ManufacturerSavantIC
Overview ·With TO-220Fa package ·Low saturation voltage ·Complement to type 2SD1412 APPLICATIONS ·High current switching applications ·Power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter Fig.. voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA; IB=0 IC=-4A ;IB=-0.4A IC=-4A ;IB=-0.4A VCB=-70V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-1V IC=-4A ; VCE=-1V IC=-1A ; VCE=-4V IE=0 ; VCB=-10V;f=1MHz 70 30 M.
Part Number2SB1019 Datasheet
DescriptionPNP Transistor
ManufacturerInchange Semiconductor
Overview ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max)@IC= -4A ·Good Linearity of hFE ·Complement to Type 2SD1412 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. ge IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A VBE(sat) Base-Emitter Saturation Voltage IC= -4A; IB= -0.4A ICBO Collector Cutoff Current VCB= -70V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -1A; VCE= -1V hFE-2 DC C.
Part Number2SB1019 Datasheet
DescriptionSILICON PNP TRANSISTOR
ManufacturerToshiba
Overview 9 : 2SB1 01 1« SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. Unit in mm POWER AMPLIFIER APPLICATIONS. FEATURES . Low Collector Saturation Vol tage : VcE(sat)=. . Low Collector Saturation Vol tage : VcE(sat)=-0,4V(Max.) a t I C=-4A . Complementary to 2SD1412 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Ta=25°C Tc=25°C Junction .

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