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2SB1019 - PNP Transistor

General Description

Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max)@IC= -4A Good Linearity of hFE Complement to Type 2SD1412 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

High current switching applications.

Power amplifier applica

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isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max)@IC= -4A ·Good Linearity of hFE ·Complement to Type 2SD1412 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current switching applications. ·Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 2 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1019 isc website：www.iscsemi.