Datasheet Details
| Part number | 2SB1019 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.73 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1019-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SB1019 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.73 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1019-INCHANGE.pdf |
|
|
|
·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max)@IC= -4A ·Good Linearity of hFE ·Complement to Type 2SD1412 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current switching applications.
·Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 2 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1019 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1019 | SILICON PNP TRANSISTOR | Toshiba |
 |
2SB1019 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB1015 | PNP Transistor |
| 2SB1016 | PNP Transistor |
| 2SB1017 | PNP Transistor |
| 2SB1018 | PNP Transistor |
| 2SB1018A | PNP Transistor |
| 2SB1005 | PNP Transistor |
| 2SB1007 | PNP Transistor |
| 2SB1009 | PNP Transistor |
| 2SB1020 | PNP Transistor |
| 2SB1021 | PNP Transistor |