Low Collector Saturation Voltage-
: VCE(sat)= -1.7 V(Max)@IC= -3A
Good Linearity of hFE
Complement to Type 2SD1406
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for audio frequency power amplifier applications.
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isc Silicon PNP Power Transistor
2SB1015
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= -1.7 V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type 2SD1406 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-3
A
IB
Base Current-Continuous
Collector Power Dissipation @ Ta=25℃
PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-0.5
A
2 W
25
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.
2SB1015 Datasheet
