Datasheet Details
| Part number | 2SB1015 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.93 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1015-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor 2SB1015.
| Part number | 2SB1015 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.93 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1015-INCHANGE.pdf |
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·Low Collector Saturation Voltage- : VCE(sat)= -1.7 V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type 2SD1406 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.5 A 2 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SB1015 | Silicon PNP Transistor | Toshiba Semiconductor |
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2SB1015 | SILICON POWER TRANSISTOR | SavantIC |
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2SB1015A | Silicon PNP Transistor | Toshiba Semiconductor |
| Part Number | Description |
|---|---|
| 2SB1016 | PNP Transistor |
| 2SB1017 | PNP Transistor |
| 2SB1018 | PNP Transistor |
| 2SB1018A | PNP Transistor |
| 2SB1019 | PNP Transistor |
| 2SB1005 | PNP Transistor |
| 2SB1007 | PNP Transistor |
| 2SB1009 | PNP Transistor |
| 2SB1020 | PNP Transistor |
| 2SB1021 | PNP Transistor |