2SB1015A
2SB1015A is Silicon PNP Transistor manufactured by Toshiba.
TOSHIBA Transistor Silicon PNP Triple Diffused Type
Audio Frequency Power Amplifier Applications
- Low collector saturation voltage: VCE (sat) =
- 1.7 V (max) (IC =
- 3 A, IB =
- 0.3 A)
- Collector power dissipation: PC = 25 W (Tc = 25°C)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB
Tj Tstg
Rating
-60 -60 -7 -3 -0.5 2.0 25 150 -55~150
Unit V V V A A
°C °C
Unit: mm
JEDEC
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