2SB1015 - Silicon PNP Transistor

Toshiba

Key Features

. Low Collector Saturation Vol tage : VC E(sat)=-1.0V(Max. ) at Ic=-3A, I B=-0.3A . Collector Power Dissipation : Pc=25W (Tc=25°C) . Complementary to 2SD1406.

2SB1015 silicon pnp transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SB1015
Manufacturer	Toshiba
File Size	90.27 KB
Description	Silicon PNP Transistor
Datasheet	2SB1015 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: SILICON PNP TRIPLE DIFFUSED TYPE 1 2SB1015 AUDIO FREQUENCY POWER AMPLIFIE R APPLICATIONS. 10.3MAX. Unit in mm FEATURES . Low Collector Saturation Vol tage : VC E(sat)=-1.0V(Max.) at Ic=-3A, I B=-0.3A . Collector Power Dissipation : Pc=25W (Tc=25°C) . Complementary to 2SD1406 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current SYMBOL VCBO VcEO VEBO ic RATING -60 -60 -7 -3 UNIT V V V A 7-0 03.2±Q.2 /. 1 , *JJ ^frf "* r X < Hrf, o s to ... 1 1.4 + 0.25 0.76-0.15 ,| 1 2.54±0.25 J 1.2 55 M s CO 2.54±a25 mNoH C5c> + lO c5] 11 r1 12 3 < 5 c? _1 _ .:: ^ Base Current Collector Power Dissipation Ta=25°C Tc=25°C Junction Temperature IB PC T j -0.5 2.0 25 150 A 1. BASE 2.