B1016A Overview
Key Specifications
Key Features
- High breakdown voltage: VCEO = -100 V
- Low collector-emitter saturation voltage: VCE (sat) = -2.0 V (max)
| Part | B1016A |
|---|---|
| Description | 2SB1016A |
| Manufacturer | Toshiba |
| Size | 249.65 KB |
Pricing from 436.36 USD, available from Walker Industrial and Newark.
Price & Availability
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Walker Industrial | -4 | 1+ : 436.36 USD | View Offer |
| Newark | 0 | 1+ : 191.33 USD 10+ : 177.73 USD 25+ : 166.08 USD 50+ : 160.25 USD |
View Offer |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| B1010 | ROHM | PNP Silicon Transistor |
| B1011 | Panasonic | 2SB1011 |
| KLM2G1DEHE-B101 | Samsung Semiconductor | eMMC moviNAND |
| B101AW06-V1 | AU Optronics | LCD Module |
| KLM4G1EEHM-B101 | Samsung Semiconductor | moviNAND |