B1016A Description
TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications 2SB1016A Unit: mm High breakdown voltage: VCEO = −100 V Low collector-emitter saturation voltage:.
- Part: B1016A
- Manufacturer: Toshiba
- Size: 249.65 KB
Related Toshiba Datasheets
| Part Number | Description |
|---|---|
| B1018A | 2SB1018A |
| B1067 | 2SB1067 |