B1016A
B1016A is 2SB1016A manufactured by Toshiba.
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SB1016A
Power Amplifier Applications
2SB1016A
Unit: mm
- High breakdown voltage: VCEO =
- 100 V
- Low collector-emitter saturation voltage: VCE (sat) =
- 2.0 V (max)
- plementary to 2SD1407A
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
- 100
Collector-emitter voltage
VCEO
- 100
Emitter-base voltage
VEBO
- 5 V
Collector current
- 5 A
Base current
- 0.5
Collector power dissipation (Tc = 25°C)
PC 30 W
JEDEC
―
Junction temperature Storage temperature range
Tj 150...
