Low collector-emitter saturation voltage VCE(sat)
φ 3.16±0.1
3.8±0.3
11.0±0.5
1.9±0.1.
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation J.
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Power Transistors
2SB1011
Silicon PNP triple diffusion planar type
For low-frequency output amplification
8.0+0.5 –0.1
Unit: mm
3.2±0.2
■ Features
• High collector-base voltage (Emitter open) VCBO • High collector-emitter voltage (Base open) VCEO • Large collector power dissipation PC • Low collector-emitter saturation voltage VCE(sat)
φ 3.16±0.1
3.8±0.3
11.0±0.5
1.9±0.1
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −400 −400 −5 −100 −200 1.2 150 −55 to +150 Unit V V V
1 2 3 0.75±0.1 4.6±0.2
0.5±0.1 0.5±0.1 2.3±0.
B1011 Datasheet
