Datasheet Summary
TOSHIBA Transistor Silicon PNP Epitaxial Type
Power Amplifier Applications
Unit: mm
- High breakdown voltage: VCEO =
- 100 V
- Low collector-emitter saturation voltage: VCE (sat) =
- 2.0 V (max)
- plementary to...
- Part: 2SB1016A
- Description: Silicon PNP Transistor
- Manufacturer: Toshiba
- Size: 249.65 KB
Other 2SB1016A Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Toshiba |
2SB1016 | SILICON PNP TRANSISTOR |
SavantIC |
2SB1016 | SILICON POWER TRANSISTOR |
Inchange Semiconductor |
2SB1016 | PNP Transistor |