2SB1016A Description
TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications 2SB1016A Unit: mm High breakdown voltage: VCEO = −100 V Low collector-emitter saturation voltage:.
2SB1016A Datasheet
| Part number | 2SB1016A |
|---|---|
| Download | 2SB1016A Datasheet (PDF) |
| File Size | 249.65 KB |
| Manufacturer | Toshiba |
| Description | Silicon PNP Transistor |
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