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2SB1017 - PNP Transistor

General Description

Low Collector Saturation Voltage- : VCE(sat)= -1.7V(Max)@IC= -3A Good Linearity of hFE Complement to Type 2SD1408 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for power amplifier applications.

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isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.7V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type 2SD1408 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ·Recommended for 20~25W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.