2SB1017 Overview
Key Specifications
Max Operating Temp: 150 °C
Description
With TO-220Fa package - Complement to type 2SD1408 APPLICATIONS - For power amplifications - Recommended for 20-25W high-fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Emitter Collector Base DESCRIPTION SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 25 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -80 -80 -5 -4 -0.4 2.0 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA; IB=0 IC=-3A; IB=-0.3A IC=-3A ;VCE=-5V VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-5V IC=-3A ; VCE=-5V IC=-0.5A; VCE=-5V IE=0, f=1MHz ; VCB=-10V 40 15 MIN -80 2SB1017 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V -1.0 -1.0 -1.7 -1.5 -30 -100 240 V V µA µA 9 130 MHz pF hFE-1 Classifications R 40-80 O 70-140 Y 120-240 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1017 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1017 4.
